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Art of analog layout(chapter 1)

都是以前看过的书，重新拿起来了，毕竟跟以前看的感觉不一样了，确实基本都能理解了。

这一章没什么好说的，需消化理解的东西不多。主要提到了几个概念，我觉得把这几个概念搞懂就差不多了。

valence electrons  ；

three types of bonding：metallic bonding、Ionic bonding、covalent bonding；

semiconductors;

random thermal vibration;

bandgap energy;

hole;

mobility;

direct-bandgap semiconductor;indirect-bandgap semiconductor;

quantum mechanical;tunnel;

traps;recombination centre;carrier lifetime--swithing speed--gold;

intrinsic/extrinsic semiconductors;

majority carriers/minority carriers;

acceptors;donors;counter doping;

diffusion;drift;

PN junction/a junction;

excess minority carriers;

built-in potential;contact potential;

space charge layer;depletion region;

rectifiers;reverse conduction/leakage;

schottky barriers;majority carrier device;

work function--contact potential;

zener diode;reverse breakdown--avalanche multiplication--tunneling--quantum mechanical--zener breakdown--which predominates;

ohmic contacts--support tunneling at low voltages;

thermoelectric effect;

forward active region;reverse active region;

neutral base region;beta(低电流时小for leakage，大电流时rolloff for low emitter injection efficency--high level injection);gold-doping;

emitter injection efficiency;

bipolar junction--saturation region--forward active region;Early Effect--lightly doped collector;

collector-base avalanche;base punchthrough;

thin silicon dioxide--gate dielectric;different work function;field effect transistor;

channel;threshold voltage;

inverted;accumulation;

FET--symmetric--asymmetric;

threshold ajust implant--Vt adjust implant;

depletion mode NMOS---depletion NMOS,enhancement NMOS;

MOSFET--linear region(triode region)--saturation region;

pinch-off;channel length modulation;body effect(backgate effect);

subthreshold ;

hotcarrier injection;

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